By R. M. Marston (Auth.)
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Extra resources for 110 Semiconductor Projects for the Home Constructor
1 sec//xF value of C This delay can be increased, if r e q u i r e d , b y increasing t h e value h of Ri or r e d u c i n g t h e value of R . 5 t o 1 0 sec via R , a n d w i t h a value of 1,000 iiF 10 it can be varied f r o m a b o u t 5 sec t o r o u g h l y 1 0 0 sec. C. operated switch A different t y p e of e l e c t r o n i c switch is s h o w n in Fig. 25. c. i n p u t w i t h an a m p l i t u d e greater t h a n a b o u t 100 m V is applied t o Q l base. T h e i n p u t i m p e d a n c e of t h e circuit r >i m > S 12V +Ve Fig.
5 mmho (= small signal common source forward transconductance). ~ 8 pFmax ( common source short-circuit input capacitance). ~ 200 m W mx (= a power dissipation, in free air). = 1 0 0 MHz (= gain-bandwidth product). DRAIN- -SOURCE GATE T O - 9 2 CASE (BOTTOM V I E W ) 2N38I9 SYMBOL (N-CHANNEL) Fig. t. (c) Fig. t. t. t. biasing system 38 15 FIELD-EFFECT TRANSISTOR PROJECTS in an e p o x y T O - 9 2 p a c k a g e . T h e device is available from a n u m b e r of m a n u f a c t u r e r s . T. t. biasing systems are in use, e a c h w i t h its o w n particular advantages a n d disadvantages.
200 m W mx (= a power dissipation, in free air). = 1 0 0 MHz (= gain-bandwidth product). DRAIN- -SOURCE GATE T O - 9 2 CASE (BOTTOM V I E W ) 2N38I9 SYMBOL (N-CHANNEL) Fig. t. (c) Fig. t. t. t. biasing system 38 15 FIELD-EFFECT TRANSISTOR PROJECTS in an e p o x y T O - 9 2 p a c k a g e . T h e device is available from a n u m b e r of m a n u f a c t u r e r s . T. t. biasing systems are in use, e a c h w i t h its o w n particular advantages a n d disadvantages. T h e simplest of these is t h e selfbiasing system s h o w n in Fig.